A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices
نویسندگان
چکیده
In this paper, we have carried out a numerical simulation of FinFETs. The model is based on 1D non-equilibrium Green’s function (NEGF) along the channel and 2-D Schrödinger equation in the confined cross section and provides insights into the performance of FinFETs with ultra small channel cross section. The simulation results of FinFETs show normal I-V characteristics with great potential in scalability even when the gate length is below 5 nm with 2-by-2 nm channel cross section.
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